Products

Quality Control
We are actively taking measures to improve product quality levels.

Applications

Why Hamamatsu?

Support

Our company

( )

Select your region and country.

NMOS linear image sensor

S8381-1024Q

null

NMOS linear image sensors with high IR sensitivity

The S8381-1024Q is designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm). The photodiode of S8381-1024Q has a height of 2.5 mm and is arrayed in a row at a spacing of 25 μm. Quartz glass is the standard window material.


Features
-High sensitivity in the IR and soft X-ray regions
-Wide active area
-High UV sensitivity with good stability
-Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
-Excellent output linearity and sensitivity spatial uniformity
-Lower power consumption: 1 mW max.
-Start pulse and clock pulses are CMOS logic compatible

If you like the product on this page, save it to your wishlist.

Specifications

Type Current output type
(Infrared enhanced type)
Image size 25.6 x 2.5 mm
Number of effective pixels 1024 x 1 pixels
Pixel size 25 x 2500 μm
Spectral response range 200 to 1000 nm
Line rate (max.) 1950 line/s
Cooling Non-cooled
Window material Quartz
Package Ceramic
Dedicated driver circuit C7884, C7884G, C7884-01, C7884G-01, C8892
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
Saturation charge: Vb=2.0 V, Vφ=5.0 V

Spectral response

KMPDB0161

Dimensional outline (unit: mm)

KMPDA0062

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Sample
  • Support
  • Other

Contact us