CCD area image sensor

S16001-1007S

High sensitivity in the near infrared region: QE=36% (λ=1000 nm), back-thinned type FFT-CCD, One-stage TE-cooled type

This FFT-CCD for measurement has improved sensitivity in the near infrared region of 800 nm or above. In addition to having near infrared high sensitivity, it can be used as an image sensor having a long side aligned along the height direction of the photosensitive area by doing the binning operation, which makes it suitable as a detector for Raman spectroscopy. The binning operation offers significant improvement in S/N and signal processing speed compared with methods by which signals are digitally added by an external circuit. 

Pixel size is 24 × 24 µm and the photosensitive area size is 24.576 (H) × 2.928 (V) mm (number of effective pixels: 1024 × 122 pixels). Pin layout and drive conditions are the same as the Hamamatsu S7030/S7031 series.


Features
- High near infrared sensitivity: QE=36% (λ=1000 nm)
- Pixel size: 24 × 24 μm
- Line/pixel binning capabilities
- MPP operation

 

Type Binning type
NIR enhanced type
Image size 24.576 x 2.928 mm
Number of effective pixels 1024 x 122 pixels
Pixel size 24 x 24 μm
Spectral response range 200 to 1100 nm
Line rate (typ.) 160 lines/s
Line rate (max.) 387 lines/s
Dark current (typ.) 200 e-/pixel/s
Readout noise (typ.) 8 e- rms
Cooling One-stage TE-cooled type
Window material AR-coated sapphire
Package Ceramic
Dedicated driver circuit C7041
Measurement condition Typ. Ta=25 ℃, Dark current: MPP mode, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

Related documents

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Support
  • Other

Contact us