InAsSb photovoltaic detector

P16612-011CA

Back-illuminated type infrared detector up to 5 μm band

 

The P16612-011CA is an infrared detector that has high sensitivity in the spectral band up to 5 μm. This high sensitivity has been achieved due to Hamamatsu’s unique crystal growth technology and process technology. By using a back-illuminated structure, we greatly improved the sensitivity temperature coefficient compared to the front-illuminated type (P13243-013CA). This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive. It is a replacement for conventional products that contain these substances.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- Compact, surface mount type ceramic package
- Compatible with lead-free solder reflow
- RoHS compliant (lead, mercury, cadmium free)

Photosensitive area 0.7×0.7 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Cutoff wavelength (typ.) 5.3 μm
Peak sensitivity wavelength (typ.) 4.1 μm
Photosensitivity (typ.) 0.0045 A/W
Detectivity D* (typ.) 1.0×109 cm・Hz1/2/W
Noise equivalent power (typ.) 4.3×10-11 W/Hz1/2
Rise time (typ.) 15 ns
Terminal capacitance (typ.) 0.5 pF
Measurement condition Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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