InAsSb photovoltaic detector

P16612-011CN

High sensitivity and high-speed IR detector (up to 5 μm band)

 

The P16612-011CN is an infrared detector that has high sensitivity in the spectral band up to 5 μm.
This high sensitivity has been achieved due to Hamamatsu’s unique crystal growth technology and process technology. By using a back-illuminated structure, we greatly improved the sensitivity temperature coefficient compared to the front-illuminated type. This is a windowless type that the customer can install a filter on. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- Compact, surface mount type ceramic package
- Compatible with lead-free solder reflow
- RoHS compliant (lead, mercury, cadmium free)

Number of elements 1
Photosensitive area 0.7 × 0.7 mm
Package Ceramic
Package category Surface mount type
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 4.1 μm
Cutoff wavelength (typ.) 5.3 μm
Photosensitivity (typ.) 4.5 mA/W
Detectivity D* (typ.) 1.0 × 109 cm・Hz1/2/W
Noise equivalent power (typ.) 4.3 × 10-11 W/Hz1/2
Rise time (typ.) 15 ns
Terminal capacitance (typ.) 0.5 pF
Measurement condition Ta=25 ℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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