This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
|Type||Near infrared type
(Low bias operation)
|Photosensitive area||φ1 mm|
|Peak sensitivity wavelength (typ.)||800 nm|
|Spectral response range||400 to 1000 nm|
|Photosensitivity (typ.)||0.5 A/W|
|Dark current (max.)||2 nA|
|Cutoff frequency (typ.)||600 MHz|
|Terminal capacitance (typ.)||6 pF|
|Breakdown voltage (typ.)||150 V|
|Temperature coefficient of breakdown voltage (typ.)||0.65 V/℃|
|Measurement condition||Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1
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