Products

Quality Control
We are actively taking measures to improve product quality levels.

Applications

Why Hamamatsu?

Support

Our Company

( )

Select your region and country.

Si APD

S12060-10

null

Low temperature coefficient, for 800 nm band

This is a 800 nm band near-infrared Si APD that can operate stably over a wide temperature range. This is suitable for applications such as optical rangefinders and FSO (free space optics).


Features
- Temperature coefficient of breakdown voltage: 0.4 V/℃
- High-speed response
- High sensitivity and low noise

If you like the product on this page, save it to your wishlist.

Specifications

Type Near infrared type
(Low temperature coefficient)
Photosensitive area φ1 mm
Package Metal
Package Category TO-18
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 2 nA
Cutoff frequency (typ.) 600 MHz
Terminal capacitance (typ.) 6 pF
Breakdown voltage (typ.) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

Spectral response

k_s6045-01_sr_xx.jpg

Dimensional outline (unit: mm)

KAPDA0137

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Sample
  • Support
  • Other

Contact us