Endpoint detection, coupled with plasma luminescence analysis, plays a pivotal role in various semiconductor manufacturing processes, including etching, oxidation diffusion film deposition, and sputtering. Light is used to monitor changes in plasma gas which provides insights into chemical reactions and surface modifications, enabling optimization of the process.
These are the world's only light sources that use a method of maintaining emission by generating plasma with a focused laser beam between discharge electrodes in a bulb filled with xenon gas. Compared to conventional xenon lamps, these light sources provide higher bright light in the ultraviolet region and have features such as long life and minute emission points.
These pulsed light sources have a high instantaneous peak power. With the continuous spectrum from ultraviolet to infrared regions of the light source, a wide range of applications are possible from analysis to imaging.
This highly sensitive detector is used for various defect inspections, endpoint monitors, and other applications. The combination with high-speed phosphors and scintillators enables detection of faint electron beams that photodiodes cannot detect, allowing the use in scanning electron microscopy (SEM) and other applications.
This FFT-CCD area image sensor is for measurement applications, and developed for faint light detection. The image sensor has low noise, low dark current and wide dynamic range, enabling faint light detection by increasing the integration time.
These detectors achieve high sensitivity in the 5 μm, 8 μm, and 10 μm wavelength bands using our unique crystal technology. The detectors feature a fast response and are used for infrared measurement in combination with quantum cascade lasers (QCL).
This compact spectrometer compactly integrates an optical system, image sensor, and circuitry. It covers a wide range of wavelengths from the ultraviolet to near-infrared regions.
This device continuously measures plasma emission during the process. Endpoint detection of etching, plasma condition monitoring, etc. are available.
These light sources are most suitable for tunable diode laser absorption spectroscopy (TDLAS). Continuous gas measurement is possible with high throughput.
Endpoint detection and plasma luminescence analysis in etching processes enable real-time monitoring of parameters such as gas composition and surface reactions, ensuring precise control over the depth and pattern of semiconductor structures, ultimately contributing to the production of high-performance devices with accuracy and efficiency.
Endpoint detection and plasma luminescence analysis play a crucial role in oxidation diffusion film deposition by monitoring process parameters and providing real-time insights into chemical reactions at the surface, ensuring precise control over the deposition process for the creation of semiconductor devices with optimal performance and reliability.
In sputtering processes, endpoint detection and plasma luminescence analysis are employed to monitor key parameters, enabling real-time assessment of material deposition and surface interactions. These techniques ensure precise control over the sputtering process, contributing to the production of semiconductor devices with accurate thin film coatings and enhanced performance.
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