Photodiode array with amplifier


Photodiode array combined with signal processing IC


This is Si photodiode array combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-ray detection applications, types with phosphor sheet affixed on the photosensitive area are also available. As the dedicated driver circuit, the C9118 series (sold separately) is provided.

-Data rate: 1 MHz max.
-Large element pitch: 0.8 mm pitch × 64 ch
-5 V power supply operation
-Simultaneous integration by using a charge amplifier array
-Sequential readout with a shift register
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range
-Integrated timing generator allows operation at two different pulse timings
-Types with phosphor sheet affixed on the photosensitive area are available for X-ray detection
(S11865-64G/-128G, S11866-64G-02/-128G-02)


Image size 51.2 x 0.8 mm
Number of effective pixels 64 pixels
Pixel size 0.7 x 0.8 mm
Pixel pitch 0.8 mm
Supply voltage 5 V
Scintillator None
Spectral response range 200 to 1000 nm
Peak sensitivity wavelength 720 nm
Line rate max. 14678 lines/s
Charge amp feedback capacitance 0.5 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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