SPIE Defense + Commercial Sensing

mapping of asbestos cement roof

Mapping of asbestos-cement roof: Spectral information could be used to identify composites, either gas or solid.

Event Name SPIE Defense + Commercial Sensing
Dates April 23 - 25, 2024
Venue Gaylord National Convention Center, National Harbor, MD | Booth #1202
Official site SPIE Defense + Commercial Sensing

Visit us at booth 1202 to see our latest developments for mid-infrared technologies, InGaAs image sensors, light sources, and ultra-low light detectors. Many of today’s needs require reaching longer wavelengths. Detectors and light sources are commonly used in infrared imaging, hyperspectral measurements, spectroscopy, gas analysis, medical imaging, and nuclear/radiation science.

April 22, 2024 • 11:00 - 11:20 AM EDT | National Harbor 4

Stephanie Butron

Stephanie Butron is an Applications Engineer at Hamamatsu Corporation in Bridgewater, New Jersey, where she is dedicated to the meticulous development of spectrometer products. In her role, she thoroughly supports OEM integration of mini- and micro-spectrometer devices in a variety of applications and end uses. With a B.S. in Chemical Engineering from Manhattan College, Stephanie combines her technical expertise and product knowledge to offer nuanced support and guidance on projects, always aiming to enhance the user experience with these intricate devices.

Featured products:

We have developed an InAsSb photovoltaic detector with preamp offering high sensitivity to mid-infrared light, up to 11 μm in wavelength. It is an ideal choice for portable gas analyzers, laser monitors, and IR spectrometers.

The H15460-40 photomultiplier tube module is a high-performance device designed for applications in multiphoton excitation microscopy. Featuring a GaAsP photocathode photomultiplier tube with a photosensitive area of 14 mm square, this module is well-suited for observing fluorescence in the UV to visible region. The H15460-40 includes an amplifier with a 30 MHz frequency band and a current-to-voltage conversion factor of 0.02 V/μA.

The G16561 to G16564-0808T series are InGaAs area image sensors featuring a hybrid structure, integrating a CMOS readout circuit with InGaAs photodiodes. These sensors boast a resolution of 320 × 256 pixels array at a 20 μm pitch. Notably, the image sensor achieves a higher dynamic range and lower noise levels thanks to the newly designed ROIC (readout integrated circuit) and the implementation of a 3-stage thermoelectric (TE) cooling system.

The new InGaAs camera C16741-40U is revolutionizing infrared imaging! Perfect for research and industry, this powerhouse camera offers high sensitivity, high resolution, low noise, and a wide spectral range. Elevate your work with our advanced technology.