Suitable for YAG laser detection (1060 nm), high sensitivity and high-speed response

Si PIN photodiode S17348

  • Hamamatsu Photonics K.K. Solid State Division

The S17348 is a Si PIN photodiode developed for detecting YAG laser light.

Conventional Si PIN photodiodes are known to exhibit degraded response characteristics and frequency characteristics for near-infrared light with wavelengths longer than 1000 nm. The S17348 is designed to withstand high reverse voltage to achieve fast response to this near-infrared light. It achieves a rise time of 3 ns* to track fast pulses at 1060 nm, the oscillation wavelength of YAG lasers.

*Calculated value from frequency response (-3 dB) at 120 MHz

Features

  • High sensitivity in infrared region: 0.37 A/W (λ=1060 nm)
  • High-speed response: fc=120 MHz (VR=100 V)
  • Low capacitance: Ct=6.5 pF (VR=100 V)
  • Large photosensitive area: φ3 mm
  • High reliability: TO-5 metal package

Applications

  • Fiber laser detection
  • YAG laser detection
  • Analytical instrument, etc.

Frequency characteristics

(Measurement example at 1060 nm) 

For more information, please contact us