Photodiode array with amplifier


Photodiode array combined with signal processing IC

This is a Si photodiode array combined with a signal processing IC chip. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865/S11866 series). The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long and narrow image sensor can be configured by arranging multiple arrays in a row. For X-ray detection applications, types with phosphor sheet affixed on the photosensitive area are also available.

-Data rate: 1 MHz max.
-Element pitch: 0.2 mm pitch × 256 ch
-3.3 V power supply operation
-Simultaneous integration method by using a charge amplifier array
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range.
-Integrated timing generator allows operation at two different pulse timings.
-Type with phosphor sheet affixed on the photosensitive area is available for X-ray detection (S13885-256G)

Image size 51.2 x 0.3 mm
Number of effective pixels 256 pixels
Pixel size 0.1 x 0.3 mm
Pixel pitch 0.2 mm
Supply voltage 3.3 V
Scintillator None
Spectral response range 200 to 1000 nm
Peak sensitivity wavelength 720 nm
Line rate max. 3844 lines/s
Charge amp feedback capacitance 0.125 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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