InAsSb photovoltaic detector


Infrared detector capable of room temperature operation (up to 8 µm band)


The P16613-011CN is infrared detector that have high sensitivity in the spectral band up to 8 µm. This high sensitivity has been achieved due to Hamamatsu unique crystal growth technology and process technology. By using a back-illuminated structure, we achieved excellent sensitivity temperature characteristics. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.


- High sensitivity
- High-speed response
- High shunt resistance
- Compact, surface mount type ceramic package
- Compatible with lead-free solder reflow
- RoHS compliant (lead, mercury, cadmium free)


The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Precautions / Unsealed products” described below.


Photosensitive area 0.7×0.7 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 6.5 μm
Cutoff wavelength (typ.) 8.3 μm
Photosensitivity (typ.) 0.0061 A/W
Detectivity D* (typ.) 3.0×108 cm・Hz1/2/W
Noise equivalent power (typ.) 2.0×10-10 W/Hz1/2
Rise time (typ.) 3 ns
Terminal capacitance (typ.) 0.8 pF
Measurement condition Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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