InGaAs PIN photodiode
InGaAs PIN photodiode G8370-83 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.
|Photosensitive area||φ3.0 mm|
|Number of elements||1|
|Spectral response range||0.9 to 1.7 μm|
|Peak sensitivity wavelength (typ.)||1.55 μm|
|Photosensitivity (typ.)||1.1 A/W|
|Dark current (max.)||75 nA|
|Cutoff frequency (typ.)||2 MHz|
|Terminal capacitance (typ.)||1000 pF|
|Noise equivalent power (typ.)||6×10-14 W/Hz1/2|
|Measurement condition||Typ. Ta=25 ℃, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=1 V, f=1 MHz, unless otherwise noted|
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