Si photodiode array


35-element Si photodiode array for UV to NIR

The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, The S4114-35Q is able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products).

-Large photosensitive area
-Low cross-talk
-Enhanced infrared sensitivity
-low dark current

Element size (per 1 element) 0.9 × 4.4 mm
Number of elements 35
Package Ceramic
Package category 40-pin DIP
Scintillator type None
Cooling Non-cooled
Reverse voltage (max.) 15 V
Spectral response range 190 to 1000 nm
Peak sensitivity wavelength (typ.) 800 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 60 pA
Rise time (typ.) 0.1 μs
Terminal capacitance (typ.) 35 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
per one element, Photosensitivity: λ=λp, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V

Spectral response

Dimensional outline (unit: mm)

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