Si PIN photodiode


For visible to near IR, precision photometry

- High sensitivity in visible to near infrared range
- High reliability
- High-speed response: fc=30 MHz
- Low capacitance

Photosensitive area 2.4 × 2.8 mm
Number of elements 1
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 10000 pA
Cutoff frequency (typ.) 30 MHz
Terminal capacitance (typ.) 10 pF
Noise equivalent power (typ.) 9.4×10-15 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz, Noise equivalent power: VR=20 V, λ=λp, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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