Si PIN photodiode


Large-area Si PIN photodiode for direct radiation detection


The S14605 is an unsealed type large large-area Si PIN photodiode for direct radiation detection. It can detect high-energy radiation with high efficiency.

-High quantum efficiency
-High energy resolution
-Low capacitance
-Depletion layer: 0.5 mm



The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.

Unsealed products / Precautions [PDF]


Photosensitive area 9 × 9 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 150 V
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 25 pF
Measurement condition Typ. Ta=25 ℃, Dark current: VR=100 mV, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted

Photosensitivity vs. X-ray energy (theoretical value)

Dimensional outline (unit: mm)

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