Si PIN photodiode


Si photodiode for visible to infrared photometry


The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 µm is 0.57 A/W (typ.), which is about 1.5 times higher than that of previous products. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier.

-High sensitivity in infrared region: 0.57 A/W (λ=1.06 µm)
-High-speed response: tr=12.5 ns (VR=100 V)
-Low capacitance: Ct=10 pF (VR=100 V)
-Large photosensitive area: φ5 mm
-High reliability: TO-8 metal package


Photosensitive area φ5.0 mm
Number of elements 1
Package Metal
Package category TO-8
Cooling Non-cooled
Reverse voltage (max.) 150 V
Spectral response range 360 to 1120 nm
Peak sensitivity wavelength (typ.) 1000 nm
Photosensitivity (typ.) 0.57 A/W
Dark current (max.) 10000 pA
Rise time (typ.) 0.0125 μs
Terminal capacitance (typ.) 10 pF
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=1060 nm, Dark current: VR=100 V, Rise time: VR=100 V, RL=50 Ω, λ=1060 nm, 10 ~ 90%, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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