Si photodiode with preamp
This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.
-Use low power consumption FET input operational amplifier
-Built-in Rf=1 GΩ and Cf=5 pF
-Variable gain with an externally connected resistor
-Low noise, low NEP
-Package with shielding effect
-Highly resistance to EMC noise
|Photosensitive area||2.4 × 2.4 mm|
|Number of elements||1|
|Reverse voltage (max.)||20 V|
|Spectral response range||340 to 1100 nm|
|Peak sensitivity wavelength (typ.)||960 nm|
|Noise equivalent power (typ.)||8×10-15 W/Hz1/2|
|Measurement condition||Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, f=10 Hz, unless otherwise noted|
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