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Back-thinned type CCD image sensor



Enhanced near infrared sensitivity: QE=36% (λ=1000 nm)

The S16010 series is a family of back-thinned FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. In addition to having high infrared sensitivity, the S16010 series can be used as an image sensor with a long photosensitive area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S16010 series has a pixel size of 14 × 14 μm and is available in two image areas of 14.336 (H) × 0.896 (V) mm (1024 × 64 pixels) and 28.672 (H) × 0.896 (V) mm (2048 × 64 pixels). The S16010 series is pin compatible with the S10420-01 series, and so operates under the same drive conditions.

- Enhanced near infrared sensitivity: QE=36% (λ=1000 nm)
- High CCD node sensitivity: 6.5 μV/e-
- High full well capacity and wide dynamic range
 (with anti-blooming function)
- Pixel size: 14 × 14 μm
- MPP operation

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Type IR-enhanced type
Image size 28.672 x 0.896 mm
Number of effective pixels 2048 x 64 pixels
Pixel size 14 x 14 μm
Spectral response range 200 to 1100 nm
Line rate (typ.) 106 lines/s
Line rate (max.) 200 lines/s
Dark current (typ.) 50 e-/pixel/s
Readout noise (typ.) 6 e- rms
Cooling Non-cooled
Package Ceramic
Dedicated driver circuit C11287-01
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

Spectral response


Dimensional outline (unit: mm)


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