Products

Quality Control
We are actively taking measures to improve product quality levels.

Applications

Why Hamamatsu?

Support

Our Company

( )

Select your region and country.

Si PIN photodiode

S3584-09

null

Large photosensitive area Si PIN photodiodes


Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

If you like the product on this page, save it to your wishlist.

Notice

The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Unsealed products / Precautions” described below.

Unsealed products / Precautions [PDF]

Specifications

Photosensitive area 28 × 28 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 10 MHz
Terminal capacitance (typ.) 300 pF
Noise equivalent power (typ.) 8.6×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted

Spectral response

KPINB0264

Dimensional outline (unit: mm)

KPINA0111

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Sample
  • Support
  • Other

Contact us