NMOS linear image sensor

S8381-256Q

NMOS linear image sensors with high IR sensitivity

The S8381-256Q is designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm). The photodiode of S8381-256Q has a height of 2.5 mm and is arrayed in a row at a spacing of 25 μm. Quartz glass is the standard window material.


Features
-High sensitivity in the IR and soft X-ray regions
-Wide active area
-High UV sensitivity with good stability
-Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
-Excellent output linearity and sensitivity spatial uniformity
-Lower power consumption: 1 mW max.
-Start pulse and clock pulses are CMOS logic compatible

Type Current output type
(Infrared enhanced type)
Image size 6.4 x 2.5 mm
Number of effective pixels 256 x 1 pixels
Pixel size 25 x 2500 μm
Spectral response range 200 to 1000 nm
Line rate (max.) 7800 lines/s
Cooling Non-cooled
Window material Quartz
Package Ceramic
Dedicated driver circuit C7884, C7884G, C7884-01, C7884G-01
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
Saturation charge: Vb=2.0 V, Vφ=5.0 V

Spectral response

Dimensional outline (unit: mm)

Related documents

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Support
  • Other

Contact us