Our photodiodes cover a broad spectral range, from near-infrared and ultraviolet wavelengths to high-energy regions. Photodiodes are available in metal, ceramic, and plastic packages, as well as module types. Custom designs are also available.

Silicon photodiodes with high sensitivity and low dark current, as well as silicon PIN photodiodes suitable for high-speed applications.

Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package. It can be used in a wide range of applications such as light position detection, imaging, and spectrophotometry.

Silicon photodiode arrays combined with signal processing integrated circuits (IC). Driver circuits available for easy implementation.

InGaAs photodiodes for near-infrared light detection. Features include high speed, high sensitivity, low noise, and spectral responses ranging from 0.5 μm to 2.6 μm.

This reflective sensor houses an InGaAs PIN photodiode and an LED in a compact package. The LED irradiates infrared light on the target object, and the photodiode signal generated from the reflected light is output digitally through an I2C interface.

InGaAs linear arrays and segmented-type photodiodes.

High-precision photodetectors that integrate a silicon, InGaAs, or InAsSb photodiode and a current-to-voltage amplifier.

Photosensor amplifiers Current-to-voltage conversion amplifiers that make our photodiodes easier to use.

Modules composed of silicon photodiodes, beam splitters, filters, and a current-to-voltage conversion circuit. Designed for absorbance measurement requiring high blocking performance and low noise.

These are differential amplification type photoelectric conversion modules containing two Hamamatsu photodiodes with balanced characteristics. Used in applications such as opthalmologic diagnosis.

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