Glossary

A

Activation energy / A/D converter / Afterpulse / Amorphous / Amplifier / Preamplifier / Amplifier bandwidth / Anisotropic etching / Anode luminous sensitivity / Anodic bonding / Arrhenius equation / ASE (amplified spontaneous emission) / Average/typical life - Lamp

B

Band gap energy / Bias angle - Microchannel plate / Bias T / Bi-phase signal / Bit error rate / Blooming / Bragg diffraction / Breakdown voltage / Bump bonding

C

C-band, L-band / Cathode blue sensitivity, Blue sensitivity index / Cathode luminous sensitivity / Cathode radiant sensitivity / Cathode type / CDR (clock and data recovery) / CDS (correlated double sampling) / Center limiting resolution / Channel diameter - MCP / Channel pitch / Compton scattering / Crosstalk / Cutoff frequency (fc)

D

D* / Dark count / Dark current / Dark resistance / DBR (distributed Bragg reflector) / Diffraction grating / Double-heterostructure / Drift - Lamps / Drift - Photomultiplier tubes / Dynamic range

E

E detector, ΔE detector / EDFA (erbium-doped fiber amplifier) / Ethernet / ENI - Photomultiplier tube / Ethernet / Equivalent background input / eV (electron volt) / Excitation / Extinction ratio / Eye diagram

F

Fano factor / FDA (floating diffusion amplifier) / Fill factor / Flip-chip bonding / Frequency response - Image intensifier / FTTH (fiber to the home) / Full well capacity / FWHM (full width at half maximum)

G

Gain / Gain bandwidth product (GB product) / Gate function / Gate function operation / Geiger discharge / Geiger mode / Group delay characteristic / Guaranteed life - Lamp

H

HA coating - Photomultiplier tube / Hysteresis

I

I2C (inter-integrated circuit) / Integration capacitance / Integration time / Interelectrode resistance (Rie) - PSD / Ionization rate

J

Jitter

L

Lattice constant / Linearity / Luminous gain

M

MBE (molecular beam epitaxy) / MCA (multichannel analyzer) / MEMS (micro-electro-mechanical systems) / Microfocus X-ray source / Minimum sensitivity / MOCVD (metal organic chemical vapor deposition) / Modulation transfer function (MTF) - CCD / MOEMS (micro-opto-electro-mechanical systems) / MOST (Media Oriented Systems Transport) / MPP (multi-pinned phase) operation / Multimode fiber / Mu metal

N

NEP (noise equivalent power) / NGN (next generation network) / Node sensitivity - CCD / Noise - CCD / Noise - NMOS linear image sensor / Noise - Photodiode / Noise - Photomultliplier tube

O

Open area ratio - MCP / Open circuit voltage (Voc) / Open-loop gain / Optical return loss (ORL) / Overload

P

p.e. (photon equivalent) / Passive alignment / Phosphor screen / Photocathode material / Photoconductive detector / Photoelectric effect / Photon counting / Photon detection efficiency (PDE) / Photoresponse nonuniformity / Photosensitive area / Photosensitivity / Photovoltaic detector / Position detection error / Position resolution (ΔR) / Power dissipation / Propagation delay time / PSD (position sensitive detector) / Pseudo-random pattern

Q

Quantum efficiency / Quenching

R

Radiant flux / Radiant sensitivity / Reach-through structure / Readout noise - CCD / Red/white ratio - Photomultiplier tube / Reflector type / Reverse voltage max. (VR max) / Rise time

S

Scintillation counting / Scintillator / Short circuit current (ISC) / Shunt resistance / Single-mode fiber / Smear / SOA (semiconductor optical amplifier) / SONET/SDH / Space charge effect / Spatial resolution / Spectral distribution / Spectral half-width / Spectral response / Stealth DicingTM Process / Synchrotron radiation

T

TAC (time-to-amplitude converter) / Terahertz wave / Terminal capacitance (Ct) / Thermistor / Thermoelectric cooling element / Tiling / Tracking detector (vertex detector) / Transimpedance amplifier (TIA) / Transit time / Transit time spread (TTS) / Transition frequency / Tunable laser

V

VCSEL (vertical cavity surface emitting laser) / VICS (Vehicle Information and Communication System)

W

WDM (wavelength division multiplexing) / Window material