NMOS linear image sensor

S8381-512Q

NMOS linear image sensors with high IR sensitivity

The S8381-512Q is designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm). The photodiode of S8381-512Q has a height of 2.5 mm and is arrayed in a row at a spacing of 25 μm. Quartz glass is the standard window material.


Features
-High sensitivity in the IR and soft X-ray regions
-Wide active area
-High UV sensitivity with good stability
-Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
-Excellent output linearity and sensitivity spatial uniformity
-Lower power consumption: 1 mW max.
-Start pulse and clock pulses are CMOS logic compatible

Type Current output type
(Infrared enhanced type)
Image size 12.8 x 2.5 mm
Number of effective pixels 512 x 1 pixels
Pixel size 25 x 2500 μm
Spectral response range 200 to 1000 nm
Line rate (max.) 3900 lines/s
Cooling Non-cooled
Window material Quartz
Package Ceramic
Dedicated driver circuit C7884, C7884G, C7884-01, C7884G-01, C8892
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
Saturation charge: Vb=2.0 V, Vφ=5.0 V

Spectral response

Dimensional outline (unit: mm)

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