InGaAs linear image sensor


Employs two InGaAs chips (cutoff wavelength: 1.65 μm, 2.15 μm)
Near infrared image sensor (0.95 to 2.15 μm)

The G12230-512WB is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. Two InGaAs chips with different cutoff wavelengths are arranged very accurately in series. The G12230-512WB provides high S/N over a wide spectral response range. The CMOS chip consists of charge amplifiers, a shift register, and a timing generator. Charge amplifiers are configured with CMOS transistor array and are connected to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The package is hermetically sealed providing excellent reliability.
The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available two types using external voltage.

- Employs two InGaAs chips
- Selectable from two conversion efficiency types
- Built-in saturation countermeasure circuit
- Built-in CDS circuit
- Built-in thermistor
- Easy operation (built-in timing generator)
- High resolution: 25 μm pitch

Image size 12.8 x 0.25 mm
Pixel size 25 x 250 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Metal
Cooling Two-stage TE-cooled
Line rate (max.) 9150 lines/s
Spectral response range 950 to 2150 nm
Measurement condition Ta=25 ℃, Td=-20℃, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2V, Vφ=5V, f=1 MHz

Spectral response

Dimensional outline (unit: mm)

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