InGaAs linear image sensor


Near infrared sensors (0.85 to 1.45 μm)

The G14237-512WA is an InGaAs linear image sensor designed for Raman spectroscopy measurement using a 1064 nm laser. Designed specifically for measuring the Raman spectral range, the cutoff wavelength has been reduced from that of the previous product (G11508-512SA) to achieve low dark current. This product consists of an InGaAs photodiode array and CMOS chips made up of charge amplifiers, offset compensation circuit, shift register, and timing generator. The charge amplifiers consist of CMOS transistor arrays and are connected to each pixel of the InGaAs photodiode array. The signal from each pixel is read out in charge integration mode, which provides high sensitivity and stable operation in the near infrared region. The package is hermetically sealed for excellent reliability. The signal processing circuit on the CMOS chip can be set to one of four conversion efficiency (CE) settings using an external voltage.

- Low noise, extremely low dark current
   [1/10 or less than that of the previous product (cutoff wavelength: 1.7 μm)]
- Selectable from four conversion efficiency types
- Built-in saturation countermeasure circuit
- Built-in CDS circuit
- Built-in thermistor
- Easy operation (built-in timing generator)
- High resolution: 25 μm pitch

Image size 12.8 x 0.5 mm
Pixel size 25 x 500 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Metal
Cooling Two-stage TE-cooled
Line rate (max.) 9150 lines/s
Spectral response range 850 to 1450 nm
Dark current (max.) 2 pA
Measurement condition unless otherwise noted, Typ. Ta=25 ℃,Vdd=5 V,INP=Vinp=PDN=4 V,Fref=1.2V,Vclk=5V,f=1 MHz, CE=16 nV/e-

Spectral response

Dimensional outline (unit: mm)

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