InGaAs linear image sensor


512 pixels, high-speed line rate near infrared sensor (0.95 to 1.7 μm)


The G14714 series are InGaAs linear image sensors designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available four types using external voltage.


- High-speed line rate: 40000 lines/s max.
- High-speed data rate: 15 MHz max.
- Selectable from four conversion efficiency types
- Built-in timing generator
- Built-in temperature sensor
- Room temperature operation


Image size 12.8 x 0.025 mm
Pixel size 25 x 25 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Ceramic
Cooling Non-cooled
Line rate (max.) 40000 lines/s
Spectral response range 950 to 1700 nm
Dark current (max.) 5 pA
Measurement condition Typ. Ta=25 ℃, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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