InAs photovoltaic detector


Low noise, high reliability infrared detectors (for 3 μm band)


InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090-01 is a non-cooled InAs photovoltaic detector.

-Low noise
-High detectivity
-High reliability
-Available in multi-element arrays (custom product)


Photosensitive area φ1 mm
Number of elements 1
Package Metal
Cooling Non-cooled
Cutoff wavelength (typ.) 3.65 μm
Peak sensitivity wavelength (typ.) 3.35 μm
Photosensitivity (typ.) 1 A/W
Detectivity D* (typ.) 4.5 × 109 cm・Hz1/2/W
Rise time (typ.) 0.7 μs
Measurement condition Typ., unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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