InAs photovoltaic detector


Low noise, high reliability infrared detectors (for 3 μm band)


InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090-21 is a two-stage TE-cooled InAs photovoltaic detector.

-Low noise
-High detectivity
-High reliability
-Available in multi-element arrays (custom product)


Photosensitive area φ1 mm
Number of elements 1
Package Metal
Cooling Two-stage TE-cooled
Cutoff wavelength (typ.) 3.45 μm
Peak sensitivity wavelength (typ.) 3.25 μm
Photosensitivity (typ.) 1.2 A/W
Detectivity D* (typ.) 3.2 × 1010 cm・Hz1/2/W
Rise time (typ.) 0.3 μs
Measurement condition Typ., unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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