InGaAs PIN photodiode


Low PDL (Polarization Dependence Loss)

InGaAs PIN photodiode G8370-83 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.


- Low PDL (Polarization Dependence Loss)
- Low noise, low dark current
- Large active area
- active area sizes: φ3 mm

Photosensitive area φ3.0 mm
Number of elements 1
Package Metal
Package Category TO-5
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 75 nA
Cutoff frequency (typ.) 2 MHz
Terminal capacitance (typ.) 1000 pF
Noise equivalent power (typ.) 6×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=1 V, f=1 MHz, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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