Si photodiode with preamp


Photodiode and preamp integrated with feedback resistance and capacitance

This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.

-Use low power consumption FET input operational amplifier
-Built-in Rf=1 GΩ and Cf=5 pF
-Variable gain with an externally connected resistor
-Low noise, low NEP
-Package with shielding effect
-Highly resistance to EMC noise

Photosensitive area 5.8 × 5.8 mm
Number of elements 1
Package Metal
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Noise equivalent power (typ.) 15×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, f=10 Hz, unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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