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InGaAs PIN photodiode

G12181-210K

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Long wavelength type (cutoff wavelength: 1.85 μm)


Features
- Cutoff wavelength: 1.85 μm
- Two-stage TE-cooled
- Low cost
- Photosensitive area: φ1 mm
- Low noise
- High sensitivity
- High reliability
- High-speed response

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Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-8
Cooling Two-stage TE-cooled
Spectral response range 0.9 to 1.85 μm
Peak sensitivity wavelength (typ.) 1.75 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 5 nA
Cutoff frequency (typ.) 17 MHz
Terminal capacitance (typ.) 195 pF
Noise equivalent power (typ.) 1.0×10-14 W/Hz1/2
Measurement condition Typ. Tc=-20 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=0.5 V, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz

Spectral response

KIRDB0483

Dimensional outline (unit: mm)

KIRDA0225

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