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Si photodiode

S1337-66BQ

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For UV to IR, precision photometry


Features
-High UV sensitivity: QE 75% (λ=200 nm)
-Low capacitance

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Specifications

Photosensitive area 5.8 × 5.8 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 100 pA
Rise time (typ.) 1 μs
Terminal capacitance (typ.) 380 pF
Noise equivalent power (typ.) 1.3×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

Spectral response

k_s1337-1010bq_sr_xx.jpg

Dimensional outline (unit: mm)

KSPDA0109

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