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Photodiode array with amplifier

S13886-128G

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Photodiode arrays combined with signal processing IC for X-ray detection

The S13886-128G is a series are photodiode array with amplifiers having a phosphor sheet attached to the photosensitive area for X-ray detection. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865 series). The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long and narrow image sensor can be configured by arranging multiple arrays in a row.


Features
-Data rate: 1 MHz max.
-Element pitch: 0.8 mm pitch × 128 ch
-3.3 V power supply operation
-Simultaneous integration method by using a charge amplifier array
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range.
-Integrated timing generator allows operation at two different pulse timings.
-Detectable energy range: 30 k to 100 keV

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Specifications

Image size 102.4 x 0.8 mm
Number of effective pixels 128 pixels
Pixel size 0.7 x 0.8 mm
Pixel pitch 0.4 mm
Supply voltage 3.3 V
Scintillator Phosphor sheet
Peak sensitivity wavelength 720 nm
Line rate max. 7568 lines/s
Charge amp feedback capacitance 0.125 pF
Note for X-ray, High sensitivity type
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, peak sensitivity wavelength: without phosphor sheet

Dimensional outline (unit: mm)

KMPDA0578

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