InAsSb photovoltaic detector


Infrared detector with improved photosensitivity temperature coefficient (up to 5 μm band)


The P16849-013CN is 2-channel infrared detector that has high sensitivity in the spectral band up to 5 μm using Hamamatsu's unique crystal growth and process technology. It is a windowless type that the customer can install two types of filters on. By using a back-illuminated structure, we greatly improved the sensitivity temperature coefficient compared to the front-illuminated type. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

- High sensitivity
- High-speed response
- High shunt resistance
- Compact, surface mount ceramic package
- Compatible with lead-free solder reflow



The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Precautions / Unsealed products” described below.


Photosensitive area 0.7×0.7 mm
Number of elements 2
Package Ceramic
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 4.1 μm
Cutoff wavelength (typ.) 5.3 μm
Photosensitivity (typ.) 0.0045 A/W
Detectivity D* (typ.) 1.0×109 cm・Hz1/2/W
Noise equivalent power (typ.) 4.3×10-11 W/Hz1/2
Rise time (typ.) 15 ns
Terminal capacitance (typ.) 0.5 pF
Measurement condition Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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