InGaAs area image sensor


Image sensor with 320 × 256 pixels developed for two-dimensional infrared imaging
(Spectral response range: 1.12 to 1.85 μm)


The G14672-0808W has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by indium bump. The timing generator in the ROIC provides an analog video output which are obtained by just supplying digital inputs. The G14672-0808W has 320 × 256 pixels arrayed at a 20 μm pitch and their signals are read out from a video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps. Electrical signals in the ROIC are converted into voltage signals and then sequentially output from the video line by the shift register. The G14672-0808W is hermetically sealed in a metal package together with a two-stage thermoelectric cooler to deliver stable operation.

- Spectral response range: 1.12 to 1.85 μm
- High sensitivity: 3.5 μV/e-
- Frame rate: 509 frames/s max.
- Low dark current
- Global shutter mode
- Partial readout function
- Simple operation (built-in timing generator)
- Two-stage TE-cooled

Spectral response range 1120 to 1850 nm
Peak sensitivity wavelength (typ.) 1750 nm
Image size 6.40 × 5.12 mm
Pixel size 20 × 20 μm
Pixel pitch 20 μm
Number of total pixels 320 × 256 pixels
Package Metal
Cooling Two-stage TE-cooled
Frame rate (max.) 509 frames/s
Dark current (typ.) 0.3 pA
Measurement condition Ta=25 ℃, Tchip=-20 ℃, Vdd=5 V, Vdd(3.3 V)=Port_sel=Mode=3.3 V, Vb1=0.83 V, PD_bias=4.28 V, INP=4.2 V

Spectral response

Dimensional outline (unit: mm)

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