InGaAs linear image sensor


Near infrared image sensor (0.95 to 1.7 μm)
Single video line: 512 pixels

The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

- Low noise, low dark current
- Two selectable conversion efficiencies
- Anti-saturation circuit
- CDS circuit
- Built-in thermistor
- Simple operation (by built-in timing generator)
- High resolution: 25 μm pitch

Image size 12.8 x 0.5 mm
Pixel size 25 x 500 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Ceramic
Cooling Non-cooled
Line rate (max.) 9150 lines/s
Spectral response range 950 to 1700 nm
Dark current (max.) 5 pA
Measurement condition unless otherwise noted, Typ. Ta=25 ℃,Vdd=5 V,INP=Vinp=PDN=4 V,Fvref=1.2V,Vφ=5V,f=1 MHz

Spectral response

Dimensional outline (unit: mm)

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