InAsSb photovoltaic detector

P16113-011MN

High sensitivity and high-speed IR detector (up to 8 μm band)

 

The P16113-011MN is infrared detector that have high sensitivity in the spectral band up to 8 µm.
This high sensitivity has been achieved due to Hamamatsu unique crystal growth technology and process technology. By using a back-illuminated structure, we achieved excellent sensitivity temperature characteristics. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- RoHS compliant (lead, mercury, cadmium free)

Number of elements 1
Photosensitive area 0.7 × 0.7 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 6.5 μm
Cutoff wavelength (typ.) 8.3 μm
Photosensitivity (typ.) 6.1 mA/W
Detectivity D* (typ.) 3.0 × 108 cm・Hz1/2/W
Noise equivalent power (typ.) 2.0 × 10-10 W/Hz1/2
Rise time (typ.) 3 ns
Terminal capacitance (typ.) 0.8 pF
Measurement condition Ta=25 ℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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