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InGaAs linear image sensor



Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm)

The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

- Wide spectral response range (0.5 to 1.7 μm)
- Low noise
- Two selectable conversion efficiencies
- Anti-saturation circuit
- CDS circuit
- Built-in thermistor
- Simple operation (by built-in timing generator)

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Image size 12.8 x 0.5 mm
Pixel size 25 x 500 μm
Pixel pitch 25 μm
Number of total pixels 512 pixels
Package Ceramic
Cooling Non-cooled
Line rate (max.) 9150 lines/s
Spectral response range 500 to 1700 nm
Dark current (max.) 5 pA
Measurement condition unless otherwise noted, Typ. Ta=25 ℃,Vdd=5 V,INP=Vinp=PDN=4 V,Fvref=1.2V,Vφ=5V,f=500 kHz

Spectral response


Dimensional outline (unit: mm)


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