InAs photovoltaic detector

P10090-11

Low noise, high reliability infrared detectors (for 3 μm band)

 

InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. The P10090-11 is a one-stage TE-cooled InAs photovoltaic detector.


Features
-Low noise
-High detectivity
-High reliability
-Available in multi-element arrays (custom product)

 

Photosensitive area φ1 mm
Number of elements 1
Package Metal
Cooling One-stage TE-cooled
Cutoff wavelength (typ.) 3.55 μm
Peak sensitivity wavelength (typ.) 3.3 μm
Photosensitivity (typ.) 1.2 A/W
Detectivity D* (typ.) 1.6 × 1010 cm・Hz1/2/W
Rise time (typ.) 0.45 μs
Measurement condition Typ., unless otherwise noted

Spectral response

Dimensional outline (unit: mm)

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