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Si PIN photodiode

S3204-08

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Large photosensitive area Si PIN photodiodes


Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

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Specifications

Photosensitive area 18 × 18 mm
Number of elements 1
Package Ceramic
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 20000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 130 pF
Noise equivalent power (typ.) 6.6×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V

Spectral response

k_s3204-08_sr_xx.jpg

Dimensional outline (unit: mm)

KPINA0040

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