Products

Quality Control
We are actively taking measures to improve product quality levels.

Applications

Why Hamamatsu?

Support

Our Company

( )

Select your region and country.

Si photodiode array

S4111-16Q

null

16 element Si photodiode array for UV to NIR

The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, The S4111-16Q is able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products).


Features
-Large photosensitive area
-Low crosstalk
-Enhanced infrared sensitivity
-low dark current

If you like the product on this page, save it to your wishlist.

Specifications

Elemenet size (per 1 erement) 1.45 × 0.9  mm
Number of elements 16
Package Ceramic
Package category 18pin-DIP
Cooling Non-cooled
Reverse voltage (max.) 15 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.58 A/W
Dark current (max.) 5 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 200 pF
Measurement condition Typ. Ta=25 ℃, unless otherwise noted
per one element, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V

Spectral response

k_s4114-46q_sr_xx.jpg

Dimensional outline (unit: mm)

k_s4111-16q_do_xx.jpg

Contact us for more information.

  • Literature
  • Price
  • Delivery
  • Custom order
  • Sample
  • Support
  • Other

Contact us