InAsSb photovoltaic detector

P16612-011CN

Infrared detector with improved photosensitivity temperature coefficient (up to 5 μm band)

 

The P16612-011CN is an infrared detector that has high sensitivity in the spectral band up to 5 μm. This high sensitivity has been achieved due to Hamamatsu’s unique crystal growth technology and process technology. By using a back-illuminated structure, we greatly improved the sensitivity temperature coefficient compared to the front-illuminated type. This is a windowless type that the customer can install a filter on. This product is an environmentally friendly infrared detector and does not use lead, mercury, or cadmium, which are substances restricted by the RoHS directive.

 

Features
- High sensitivity
- High-speed response
- High shunt resistance
- Compact, surface mount type ceramic package
- Compatible with lead-free solder reflow
- RoHS compliant (lead, mercury, cadmium free)

Notice

The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.
Before using this product, always read “Precautions / Unsealed products” described below.

Specifications

Photosensitive area 0.7×0.7 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Peak sensitivity wavelength (typ.) 4.1 μm
Cutoff wavelength (typ.) 5.3 μm
Photosensitivity (typ.) 0.0045 A/W
Detectivity D* (typ.) 1.0×109 cm・Hz1/2/W
Noise equivalent power (typ.) 4.3×10-11 W/Hz1/2
Rise time (typ.) 15 ns
Terminal capacitance (typ.) 0.5 pF
Measurement condition Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz

Spectral response

Dimensional outline (unit: mm)

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