Optical MicroGauge C11011 series | Hamamatsu Photonics

The Optical MicroGauge Thickness measurement system C11011 series is a film thickness measurement system utilizing laser interferometry. Allows for high speed measurement at 60 Hz, so it can also be used inline measurement in factories. Combine with the optional mapping system to allow for prototype thickness distribution measurement. It can be used in a wide variety of applications, from monitoring manufacturing processes to quality control.

Catalog 2.6 MB/PDF

Features
Measurement principle: spectral interferometry
Specifications
Dimensions

Features

Infrared light measurement for non-transparent (white) samples
High-speed measurement at 60 Hz
Measurement of wafers with patterns or protective films
Long working distance
Mapping function (Option)
External control available

Measurement principle: spectral interferometry

Multiple reflections occur inside the thin film as light enters a thin film sample. These multiple-reflection light waves boost or weaken each other along with their phase difference. The phase difference of each multiple-reflection light is determined by the light wavelength and optical path length. Therefore, the reflected or transmitted spectrum from the sample shows a specific spectrum determined by the film thickness.

Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. The Optical NanoGauge Thickness measurement system utilizes spectral interferometry to analyze a target spectrum by the curve-fitting or FFT (Fast Fourier Transform) method that matches your application.

Measurement principle: spectral interferometry

The number of signals is increased as the film thickens. The signal intervals in short wavelength range appears more often than those in the long wavelength range.

Specifications

Type number	C11011-02	C11011-02W	C11011-22	C11011-22W
Measurement film thickness range (glass) ^*1	25 μm to 2.2 mm	25 μm to 2.9 mm	25 μm to 2.2 mm	25 μm to 2.9 mm
Measurement film thickness range (silicon) ^*2	10 μm to 0.9 mm	10 μm to 1.2 mm	10 μm to 0.9 mm	10 μm to 1.2 mm
Measurement reproducibility (glass) ^*3	250 nm	250 nm	250 nm	250 nm
Measurement reproducibility (silicon) ^*4	100 nm	100 nm	100 nm	100 nm
Measurement accuracy ^*5	±0.5 μm（≦500 μm）, ±0.1 %（>500 μm）	±0.5 μm（≦500 μm）, ±0.1 %（>500 μm）	±0.5 μm（≦500 μm）, ±0.1 %（>500 μm）	±0.5 μm（≦500 μm）, ±0.1 %（>500 μm）
Light source	Infrared LD （1300 nm)	Infrared LD (1300 nm)	Infrared LD （1300 nm)	Infrared LD (1300 nm)
Spot size	Approx. Φ60 μm	Approx. Φ60 μm	Approx. Φ60 μm	Approx. Φ60 μm
Working distance ^*6	155 mm	155 mm	155 mm	155 mm
Number of measurable layers	Max. 1 layer	Max. 1 layer	Max. 10 layers	Max. 10 layers
Analysis	Peak detection	Peak detection	Peak detection	Peak detection
Shortest takt time	16.7 ms/point	22.2 ms/point	16.7 ms/point	22.2 ms/point
External communication interface	RS-232C, PIPE	RS-232C, PIPE	RS-232C, Ethernet	RS-232C, Ethernet
Interface	USB 2.0 (Main unit - Computer)	USB 2.0 (Main unit - Computer)	USB 2.0 (Main unit - Computer)	USB 2.0 (Main unit - Computer)
Power supply voltage	AC100 V to AC240 V, 50 Hz/60 Hz	AC100 V to AC240 V, 50 Hz/60 Hz	AC100 V to AC240 V, 50 Hz/60 Hz	AC100 V to AC240 V, 50 Hz/60 Hz
Power consumption	Approx. 50 VA	Approx. 50 VA	Approx. 50 VA	Approx. 50 VA
Light guide connector shape	FC	FC	FC	FC

*1: When converted with the refractive index of glass = 1.5.
*2: When converted with the refractive index of silicon = 3.67.
*3: Standard deviation (tolerance) when measuring glass film.
*4: Standard deviation (tolerance) when measuring silicon.

*5: When measuring silicon.

*6: Optional model with 1000 mm working distance is available.