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Si APD

S14644-05

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High speed, compact Si APD for the 800 nm band featuring low-bias operation

This Si APD is suitable for detecting light in the 800 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S10341 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures.


Features
- Small package: 3.1 × 1.8 × 1.0t mm
- Peak sensitivity wavelength: 800 nm (M=100)
- Low bias operation: Breakdown voltage=180 V max.
- High-speed response: Cutoff frequency=1 GHz typ. (λ=800 nm, M=100)
- Reduction of breakdown voltage variation: 160 ± 20 V

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Specifications

Type High-speed type
(for 800 nm, Low bias operation)
Photosensitive area φ0.5 mm
Package Plastic
Package Category Surface mount type
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 0.5 nA
Cutoff frequency (typ.) 1000 MHz
Terminal capacitance (typ.) 1.6 pF
Breakdown voltage (typ.) 160 V
Temperature coefficient of breakdown voltage (typ.) 0.63 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

Spectral response

KAPDB0444

Dimensional outline (unit: mm)

KAPDA0204

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