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High speed, compact Si APD for the 900 nm band featuring low-bias operation

This Si APD is suitable for detecting light in the 900 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S12926 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures.

- Small package: 3.1 × 1.8 × 1.0t mm
- Peak sensitivity wavelength: 840 nm (M=100)
- Low bias operation: Breakdown voltage=195 V max.
- High-speed response: Cutoff frequency=600 MHz typ. (λ=900 nm, M=100)
- Reduction of breakdown voltage variation: 175 ± 20 V

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Type High-speed type
(for 900 nm, Low bias operation)
Photosensitive area φ0.2 mm
Package Plastic
Package Category Surface mount type
Peak sensitivity wavelength (typ.) 840 nm
Spectral response range 400 to 1100 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 0.4 nA
Cutoff frequency (typ.) 600 MHz
Terminal capacitance (typ.) 0.5 pF
Breakdown voltage (typ.) 175 V
Temperature coefficient of breakdown voltage (typ.) 1.1 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=900 nm, M=1

Spectral response


Dimensional outline (unit: mm)


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