HyperGauge Thickness measurement system C17319-11

Measure thickness distribution of a 300 mm wafer in only 5 seconds

The HyperGauge Thickness measurement system C17319-11 employs a spectroscopic interference method for precise film thickness measurement. Equipped with the λ-Capture^® technology, which detects wavelength shifts using high-sensitivity cameras without a spectrometer, it can measure the entire film thickness of up to 300 mm wafers in as little as 5 seconds.

λ-Capture is a patented wavelength detection technology developed by Hamamatsu Photonics.

Catalog 1.9 MB/PDF

Snapshot of in-plane thickness distribution
Acquire thickness distribution in only 5 seconds
Boost productivity with fast uniformity measurement
Measurement example
Measurement principle
λ-Capture technology for high speed wavelength measurement
Specifications
Dimensions

Snapshot of in-plane thickness distribution

Compared to point sensor systems, HyperGauge Thickness measurement system C17319-11 delivers dramatically faster acquisition of thickness distribution. Combining high resolution with excellent measurement repeatability, the system achieves the accuracy required for inspecting not only bare wafers but also patterned wafers.

Acquire thickness distribution in only 5 seconds

By adopting Hamamatsu’s proprietary wavelength detection technology, λ-Capture, combined with high-sensitivity cameras, the system enables area-based thickness measurement. It captures the in-plane thickness distribution of wafers up to 300 mm in diameter in as little as 5 seconds. Since the entire wafer surface is imaged at once, it simplifies measurement point selection and alignment compared to point sensor systems.

Boost productivity with fast uniformity measurement

In semiconductor manufacturing processes, variations in film thickness can occur on wafers due to factors such as pin temperature inside the chamber. These thickness non-uniformities negatively affect product quality, making it essential to equalize film thickness between process steps. With point sensor systems, the number of measurement points is limited by time constraints, making it difficult to fully capture in-plane thickness distribution. By adopting an area-based approach, our system measures in-plane thickness distribution from approximately 750 000 points in only 5 seconds. This enables shorter process times for improved productivity and better yield through comprehensive thickness distribution analysis. Fast in-plane uniformity measurement significantly contributes to both productivity and quality in semiconductor manufacturing.

Chamber-induced thickness variation

Thickness inspection in semiconductor process

Measurement example

Pattern evaluation (comparison of thickness distribution profiles)

We acquired the thickness distribution between patterns and compared the thickness distribution profiles of Optical NanoGauge, which uses a point sensor method, and HyperGauge, which uses an area-based method. The results show that HyperGauge can measure film thickness with accuracy comparable to the point sensor method.

Large non-uniformity: SiO₂ 300 nm

Small non-uniformity: SiO₂ 500 nm

Ultra-thin film: SiO₂ 10 nm

Pattern evaluation: SiOx₂ 300 nm

Through water & glass: SiO₂ 500 nm

Measurement principle

HyperGauge employs spectroscopic interferometry. This method analyzes the reflections from thin-film samples to measure film thickness. The interference spectrum shifts depending on the film thickness.

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λ-Capture technology for high speed wavelength measurement

λ-Capture is a proprietary wavelength detection technology that enables wavelength measurement without using a spectrometer.When performing wavelength measurement of the entire wafer, point measurement with a conventional spectrometer or line measurement with an imaging spectrometer takes an enormous amount of time.

By utilizing two high-sensitivity cameras, it measures wavelengths across an area, allowing high-speed spectroscopic measurement of the entire wafer surface. By incorporating this technology into HyperGauge, in-plane film thickness distribution measurement across the wafer is achieved in just 5 seconds.

λ-Capture technology

Specifications

Product number	C17319-11
Measurement film thickness range	10 nm to 1000 nm
Measurement accuracy	Film thickness 10 nm to 100 nm: 0.1 nm Film thickness 100 nm to 1000 nm: ±0.1 ％
Measurement reproducibility	Film thickness 10 nm to 100 nm (96 integrations): ±1 nm Film thickness 100 nm to 1000 nm (96 integrations): ±1 ％
Stability	Temperature dependence: Environmental temperature variation +20℃ to + 30℃: ±1 ％ Height dependency (5 mm height variation): ±1 ％ Long-term stability (1 hour after startup): ±0.5 ％
Field of view	Full 300 mm wafer surface
Spatial resolution	0.3 mm/pixel
Working distance	Field lens botton-to-sample surface distance: 30 nm to 100 mm
Analysis	λ-Capture analysis
Measurement time (including analysis time)^*1	5 seconds
External communication interface	Camera Link, RS232C
Power supply voltage	DC 24 V
Power consumption	Approx. 40 W