Low temperature coefficient, for 800 nm band


This is a 800 nm band near-infrared Si APD that can operate stably over a wide temperature range. This is suitable for applications such as optical rangefinders and FSO (free space optics).

- Temperature coefficient of breakdown voltage: 0.4 V/℃
- High-speed response
- High sensitivity and low noise


Type Near infrared type
(Low temperature coefficient)
Photosensitive area φ0.2 mm
Package Metal
Package Category TO-18
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 0.5 nA
Cutoff frequency (typ.) 1000 MHz
Terminal capacitance (typ.) 1.5 pF
Breakdown voltage (typ.) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

Spectral response

Dimensional outline (unit: mm)

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