High sensitivity in near infrared range (λ=900 nm)

This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).

- High sensitivity in near infrared range (λ=900 nm)
- Stable operation

Type Near infrared type
(900 nm band, low terminal capacitance)
Photosensitive area φ0.5 mm
Package Metal
Package Category TO-18
Peak sensitivity wavelength (typ.) 860 nm
Spectral response range 440 to 1100 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 2 nA
Cutoff frequency (typ.) 400 MHz
Terminal capacitance (typ.) 0.7 pF
Breakdown voltage (typ.) 250 V
Temperature coefficient of breakdown voltage (typ.) 1.85 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=900 nm, M=1

Spectral response

Dimensional outline (unit: mm)

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