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Inspection for particle contamination and surface defects
Illuminating precision in defect inspection across key processes
Visible light and near-infrared cameras are used for nondestructive and noncontact inspection of minute foreign matters and microdefects across many of the semiconductor process steps.
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This APS CMOS area image sensor has high sensitivity in the near infrared region. The pixel format is SXGA (1280 x 1024 pixels), capable of imaging at up to 146 frames/s.
This TDI-CCD provides images with sufficient brightness even in low-light conditions, such as during high-speed imaging. TDI operation dramatically improves sensitivity by integral exposures of moving objects.
This camera has sensitivity in the near infrared region. The camera enables inspection of defects and voids by imaging the internal structures through transmission.
These light sources have high output and high stability in the ultraviolet region. The light sources have a continuous spectrum in the ultraviolet region, long life, high stability, and high output required for lamps used in analytical instruments.
These light sources have a continuous spectrum from the ultraviolet to infrared regions with high brightness and color temperature. Widely used as a precision photometric lamp due to the use of our unique high-performance cathode.
These pulsed light sources have a high instantaneous peak power. With the continuous spectrum from ultraviolet to infrared regions of the light source, a wide range of applications are available from analysis to imaging.
Photomultiplier tubes are widely used in semiconductor wafer inspection systems. In wafer inspection, the wafer is scanned by a laser beam, and the scattered light caused by dirt or defects is detected by a photomultiplier tube.
The following photomultiplier tubes are recommended for their high quantum efficiency, good uniformity and low spike noise.
These are the world's only light sources that use a method of maintaining emission by generating plasma with a focused laser beam between discharge electrodes in a bulb filled with xenon gas. Compared to conventional xenon lamps, these light sources provide higher bright light in the ultraviolet region and have features such as long life and minute emission points.
Semiconductor processes where defects are inspected for
Defect inspection provides feedback to adjust and improve wafer cleaning processes. Nondestructive and noncontact inspection ensures the wafer is not damaged in the process of inspection.
Defect inspection can be done between any number of the photoresist coating steps to ensure the quality of the coat and minimize defects. Nondestructive and noncontact inspection ensures the wafer is not damaged in the process of inspection.
Defect inspection can also be done after photolithrography enables meticulous defect detection, ensuring the integrity and quality of semiconductor layers. Nondestructive and noncontact inspection ensures the wafer is not damaged in the process of inspection.
Defect inspection can also be used before and after the etching process. By unveiling surface topography changes and providing high-resolution imaging, photonics ensures a thorough inspection process, contributing to reliable semiconductor production.
Light plays a crucial role in analyzing layer consistency, detecting particle contamination, and identifying surface defects in semiconductor fabrication. By enhancing defect visibility, photonics ensures thorough inspection during oxidation diffusion, contributing to the overall quality and reliability of semiconductor production.
Light enhances defect visibility for thorough analysis of particle contamination and surface defects in semiconductor production. The process also improves surface resolution, and with the aid of photonics, allows for precise detection of defects, especially irregularities in particle contamination during semiconductor fabrication.
Light assists in identifying damage and defects induced by ion implantation, ensuring a thorough inspection for particle contamination and surface irregularities during semiconductor fabrication.
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